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define mutual conductance with respect to field-effect transistors (july 2019)
Mutual conductance, also known as transconductance, is a measure of the ability of a field-effect transistor (FET) to amplify electrical signals. It is defined as the change in drain current (I_D) divided by the change in gate-to-source voltage (V_GS) at a constant drain-to-source voltage (V_DS). ItRead more
Mutual conductance, also known as transconductance, is a measure of the ability of a field-effect transistor (FET) to amplify electrical signals. It is defined as the change in drain current (I_D) divided by the change in gate-to-source voltage (V_GS) at a constant drain-to-source voltage (V_DS). It is typically expressed in units of siemens (S).
In an FET, the mutual conductance is determined by the properties of the channel material and the geometry of the device. It is a measure of how much the drain current changes in response to a change in the gate-to-source voltage, and is an important factor in determining the gain of the FET.
Overall, mutual conductance is a measure of the ability of an FET to amplify electrical signals and is determined by the properties of the channel material and the geometry of the device.
See lessExplain the function of each of the following parts of a cathode-ray tube i. aquadag layer ii. screen (july 2019)
i. Aquadag layer: The aquadag layer is a layer of conductive material that is applied to the inside surface of the faceplate of a cathode-ray tube. It serves as the cathode of the tube and is responsible for emitting electrons when heated by the filament. The aquadag layer is typically made of a conRead more
i. Aquadag layer:
The aquadag layer is a layer of conductive material that is applied to the inside surface of the faceplate of a cathode-ray tube. It serves as the cathode of the tube and is responsible for emitting electrons when heated by the filament. The aquadag layer is typically made of a conductive material, such as graphite, that is suspended in a binder.
ii. Screen:
The screen is the part of a cathode-ray tube that is used to display the image or information being transmitted. It consists of a layer of phosphor material that is coated on the inside surface of the faceplate of the tube. When the cathode emits electrons and they strike the screen, they cause the phosphor material to emit light, which creates the image or information being displayed. The screen is typically made of a phosphor material that is chosen based on the desired color and brightness of the image being displayed.
See lessmaterials used in making the cathode of thermionic valves (july 2019)
Thermionic valves, also known as vacuum tubes or electron tubes, are electronic devices that use thermionic emission to generate and control electric current. The cathode of a thermionic valve is the electrode that emits electrons when heated. The material used to make the cathode of a thermionic vaRead more
Thermionic valves, also known as vacuum tubes or electron tubes, are electronic devices that use thermionic emission to generate and control electric current. The cathode of a thermionic valve is the electrode that emits electrons when heated. The material used to make the cathode of a thermionic valve is typically a high-work-function metal, such as tungsten or molybdenum. These metals have a high melting point and are resistant to erosion, which makes them suitable for use as cathodes in thermionic valves. Other materials that may be used for the cathode of a thermionic valve include thoria-coated iridium and cerium oxide-coated tungsten.
See lessstate the direction of electronics and holes inside the materials (july 2019)
The direction of electronics and holes inside a material depends on the type of material and the conditions it is subjected to. In an electrical conductor, such as a metal, the electrons are free to move and can flow through the material in response to an applied electric field. The direction of eleRead more
The direction of electronics and holes inside a material depends on the type of material and the conditions it is subjected to.
In an electrical conductor, such as a metal, the electrons are free to move and can flow through the material in response to an applied electric field. The direction of electron flow is opposite to the direction of the applied electric field.
In an electrical insulator, such as a rubber or plastic, the electrons are not free to move and cannot conduct an electric current. However, under certain conditions, such as when the material is subjected to high voltage or intense light, the electrons may become excited and jump from their normal energy levels to higher energy levels. This leaves behind positively charged “holes” in the material, which can move in response to an applied electric field. The direction of hole flow is the same as the direction of the applied electric field.
Overall, the direction of electronics and holes inside a material depends on the type of material and the conditions it is subjected to. In a conductor, the electrons flow in the opposite direction of the applied electric field, while in an insulator, the holes flow in the same direction as the applied electric field.
See lessadvantages of silicon over germanium diodes (july 2019)
Silicon diodes have several advantages over germanium diodes: Higher voltage rating: Silicon diodes can typically handle higher voltage levels than germanium diodes, which makes them more suitable for use in high-voltage circuits. Lower forward voltage drop: The forward voltage drop of a diode is thRead more
Silicon diodes have several advantages over germanium diodes:
- Higher voltage rating: Silicon diodes can typically handle higher voltage levels than germanium diodes, which makes them more suitable for use in high-voltage circuits.
- Lower forward voltage drop: The forward voltage drop of a diode is the voltage drop across the diode when it is conducting current. Silicon diodes have a lower forward voltage drop than germanium diodes, which makes them more efficient and allows them to pass more current.
- Higher temperature range: Silicon diodes are more stable and reliable at higher temperatures than germanium diodes, which makes them more suitable for use in high-temperature environments.
- Better switching performance: Silicon diodes have faster switching speeds than germanium diodes, which makes them more suitable for use in high-frequency circuits.
- Greater availability: Silicon is more abundant and easier to obtain than germanium, which makes it easier to manufacture silicon diodes in large quantities.
See lessways of ionizing an atom (july 2019)
There are several ways to ionize an atom, which involves removing or adding electrons to the atom to create a charged particle known as an ion. Some common methods of ionizing atoms include: Thermal ionization: This involves heating an atom to a high temperature, which can cause the atom's electronsRead more
There are several ways to ionize an atom, which involves removing or adding electrons to the atom to create a charged particle known as an ion. Some common methods of ionizing atoms include:
- Thermal ionization: This involves heating an atom to a high temperature, which can cause the atom’s electrons to gain enough energy to escape the atom’s nucleus.
- Photon ionization: This involves exposing an atom to high-energy photons, such as those found in X-rays or UV light, which can transfer energy to the atom’s electrons, causing them to escape the nucleus.
- Charge exchange: This involves colliding an atom with another charged particle, such as a proton or an ion, which can transfer charge to the atom, causing it to become ionized.
- Electron impact: This involves colliding an atom with a high-energy electron, which can transfer energy to the atom’s electrons, causing them to escape the nucleus.
See lessstate any two of bohr’s postulates with respect to the energy levels of an electron
The electron in an atom can only exist at certain energy levels, or energy states, and cannot exist at intermediate energy levels. The energy levels of an electron in an atom are quantized, meaning that they can only take on certain specific values. This means that the energy of the electron is notRead more
- The electron in an atom can only exist at certain energy levels, or energy states, and cannot exist at intermediate energy levels.
- The energy levels of an electron in an atom are quantized, meaning that they can only take on certain specific values. This means that the energy of the electron is not continuous, but rather it can only change in discrete increments.
See lessdefine the following JFET parameter i. drain-source saturation current, ii. gate-source cutoff (pinch-off) voltage
I. Drain-source saturation current: The drain-source saturation current, abbreviated as IDSS, is a parameter of a junction field-effect transistor (JFET) that specifies the maximum drain current that can be achieved when the drain-to-source voltage is at its maximum value and the transistor is in thRead more
I. Drain-source saturation current: The drain-source saturation current, abbreviated as IDSS, is a parameter of a junction field-effect transistor (JFET) that specifies the maximum drain current that can be achieved when the drain-to-source voltage is at its maximum value and the transistor is in the saturation region. The saturation region is a region of operation in which the transistor is fully turned on and the drain current is at its maximum level. The drain-source saturation current is a measure of the transistor’s current-carrying capability and is an important factor in determining the power dissipation of the transistor.
II. Gate-source cutoff (pinch-off) voltage: The gate-source cutoff (pinch-off) voltage, abbreviated as VGS(off), is a parameter of a JFET that specifies the minimum gate-to-source voltage required to turn off the transistor and cut off the drain current. The gate-source cutoff voltage is a measure of the transistor’s control characteristics and is an important factor in determining the transistor’s switching performance. A lower gate-source cutoff voltage indicates that the transistor can be more easily turned off, while a higher gate-source cutoff voltage indicates that the transistor is more difficult to turn off.
See lessmerits of a full-wave centre-tapped single-phase rectifier
Improved efficiency: A full-wave centre-tapped rectifier has a higher efficiency compared to a half-wave rectifier, as it utilizes both the positive and negative half-cycles of the AC input voltage. This means that more of the input power is converted to DC output power, resulting in a lower power lRead more
- Improved efficiency: A full-wave centre-tapped rectifier has a higher efficiency compared to a half-wave rectifier, as it utilizes both the positive and negative half-cycles of the AC input voltage. This means that more of the input power is converted to DC output power, resulting in a lower power loss and a higher overall efficiency.
- Reduced ripple: A full-wave centre-tapped rectifier has a lower ripple factor compared to a half-wave rectifier, as it produces a smoother DC output voltage. The ripple factor is a measure of the fluctuation in the DC output voltage and is typically expressed as a percentage. A lower ripple factor indicates a more stable DC output voltage and is desirable in many applications.
See lessdefine i. peak inverse voltage ii. ripple factor with respect to dc power supply
I. Peak inverse voltage (PIV): The peak inverse voltage (PIV) of a dc power supply is the maximum voltage that can be applied to the reverse-biased diode in a rectifier circuit without breaking down and conducting current. The PIV is an important specification for a dc power supply, as it determinesRead more
I. Peak inverse voltage (PIV): The peak inverse voltage (PIV) of a dc power supply is the maximum voltage that can be applied to the reverse-biased diode in a rectifier circuit without breaking down and conducting current. The PIV is an important specification for a dc power supply, as it determines the maximum voltage that can be handled by the rectifier circuit.
II. Ripple factor: The ripple factor of a dc power supply is a measure of the amount of fluctuation or “ripple” in the dc output voltage. It is defined as the ratio of the root-mean-square (RMS) value of the ripple voltage to the average dc output voltage. The ripple factor is typically expressed as a percentage and is an important parameter for evaluating the quality of a dc power supply. A lower ripple factor indicates a smoother, more stable dc output voltage, while a higher ripple factor indicates a greater amount of fluctuation in the output voltage
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